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| S T S 3403 S amHop Microelectronics C orp. AUG .16.2005 P -C hannel E nhancement Mode MOS FE T P R ODUC T S UMMAR Y V DS S ID -3A F E AT UR E S ( m W ) Max R DS (ON) S uper high dense cell design for low R DS (ON). 65 @ V G S = -10V 80 @ V G S = -4.5V R ugged and reliable. S OT-23 P ackage. D -30V S OT-23 D S G G S ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous @ TJ=25 C b -P ulsed Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange S ymbol VDS VGS ID IDM IS PD TJ, TS TG Limit - 30 20 -3 - 10 -1.25 1.25 -55 to 150 Unit V V A A A W C THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-Ambient a R JA 100 C /W 1 S T S 3403 E LE CTR ICAL CHAR ACTE R IS TICS (TA =25 C unless otherwise noted) Parameter 5 S ymbol BVDSS IDSS IGSS VGS(th) R DS (ON) ID(ON) gFS c Condition VGS = 0V, ID = -250uA VDS = -24V, VGS = 0V VGS = 20V, VDS = 0V VDS = VGS, ID = -250uA VGS = -10V, ID =-3A VGS = -4.5V, ID = -1A VDS = -5V, VGS = -10V VDS = -5V, ID = - 3A Min Typ C Max Unit -30 -1 100 -1 -1.5 -3 44 60 OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage V uA nA V ON CHAR ACTE R IS TICS b Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance 65 m-ohm 80 m-ohm A 7 870 290 180 VDD = -10V, ID = -1A, VGEN = - 4.5V, R GE N = 6 ohm VDS =-10V,ID =-3A,VGS =-4.5V VDS =-10V, ID = -3A, VGS =-4.5V 27 67 35 26 7.7 1.2 4 S PF PF PF 5 DYNAMIC CHAR ACTE R IS TICS Input Capacitance Output Capacitance R everse Transfer Capacitance CISS COSS CRSS c VDS =-10V, VGS = 0V f =1.0MHZ S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-S ource Charge Gate-Drain Charge tD(ON) tr tD(OFF) tf Qg Qgs Qgd ns ns ns ns nC nC nC 2 S T S 3403 E LE CTR ICAL CHAR ACTE R IS TICS (TA=25 C unless otherwise noted) Parameter 5 Diode Forward Voltage S ymbol VSD Condition VGS = 0V, Is =-1.25A Min Typ Max Unit -0.78 -1.2 V C DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS b Notes a.S urface Mounted on FR 4 Board, t 10sec. b.Pulse Test:Pulse Width 300us, Duty Cycle 2%. c.Guaranteed by design, not subject to production testing. 20 -V G S =4V 25 25 C 20 -I D, Drain C urrent(A) 12 -V G S =10,9,8,7,6,5V -ID, Drain C urrent (A) 16 15 -55 C 8 4 10 -V G S =3V 5 T j=125 C 0 0.0 0.8 1.6 2.4 3.2 4.0 4.8 -V G S =2V 0 0 0.5 1 1.5 2 2.5 3 -V DS , Drain-to-S ource Voltage (V ) -V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C haracteris tics 2.2 1000 C is s 800 600 400 200 C rs s 0 0 5 10 15 20 25 30 0 C os s F igure 2. Trans fer C haracteris tics V G S =-4.5V ID=-3A R DS (ON), On-R es is tance (Normalized) 1.8 1.4 1.0 0.6 0.2 C , C apacitance (pF ) -50 -25 0 25 50 75 100 125 T j( C ) -V DS , Drain-to S ource Voltage (V ) F igure 3. C apacitance F igure 4. On-R es is tance Variation with Temperature 3 S T S 3403 B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 V DS =V G S ID=-250uA 1.10 ID=-250uA 1.07 1.04 1.00 0.97 0.94 0.91 -50 -25 0 25 50 75 100 125 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) with T emperature 12 F igure 6. B reakdown V oltage V ariation with T emperature 20 gFS , T rans conductance (S ) 8 6 4 2 0 0 5 10 15 V DS =-5V 20 25 -Is , S ource-drain current (A) 10 10 2 1 0 0.4 0.8 1.2 T J =25 C 1.6 2.0 -IDS , Drain-S ource C urrent (A) -V S D, B ody Diode F orward V oltage (V ) F igure 7. T rans conductance V ariation with Drain C urrent -V G S , G ate to S ource V oltage (V ) F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 50 10 -ID, Drain C urrent (A) 8 6 4 2 0 0 VDS =-10V ID=-3A 10 R D ON S( )L im it 10 0m 10 s ms 1 1s DC 0.1 0.03 VGS =-4.5V S ingle P ulse T c=25 C 0.1 1 10 30 50 2 4 6 8 10 12 14 16 Qg, T otal G ate C harge (nC ) -V DS , Drain-S ource V oltage (V ) F igure 9. G ate C harge F igure 10. Maximum S afe O perating Area 4 S T S 3403 V DD ton toff tr 90% 5 VG S R GE N V IN D G RL V OUT td(on) V OUT td(off) 90% 10% tf 10% INVE R TE D 90% S V IN 50% 10% 50% P ULS E WIDTH F igure 11. S witching T es t C ircuit 10 F igure 12. S witching Waveforms Normalized Transient Thermal Resistance 1 0.5 0.2 P DM t1 on 0.1 0.1 0.05 0.02 1. 2. 3. 4. t2 0.01 0.00001 0.01 Single Pulse 0.0001 0.001 0.01 0.1 1 10 R thJ A (t)=r (t) * R thJ A R thJ A=S ee Datas heet T J M-T A = P DM* R thJ A (t) Duty C ycle, D=t1/t2 100 1000 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve 5 S T S 3403 A L G F M J B C I H E D (TYP .) 2.70 2.40 1.40 0.35 0 3.10 2.80 1.60 0.50 0.10 0.55 1.30 0.20 1.15 10X 0.106 0.094 0.055 0.014 0 0.122 0.110 0.063 0.020 0.004 F G 0.45 1.90 REF. 1.00 0.10 0.40 0.45 0X 0.022 0.018 0.075 REF. 0.039 0.004 0.016 0.033 0X 0.051 0.008 0.045 10X I J L M 6 S T S 3403 SOT-23 Tape and Reel Data SOT-23 Carrier Tape UNIT:P PACKAGE SOT-23 A0 3.20 O0.10 B0 3.00 O0.10 K0 D0 D1 i1.50 +0.10 E 8.00 +0.30 -0.10 E1 1.75 O0.10 E2 3.50 O0.05 P0 4.00 O0.10 P1 4.00 O0.10 P2 2.00 O0.05 T 0.20 O0.02 i1.00 1.33 O0.10 +0.25 SOT-23 Reel UNIT:P TAPE SIZE 8P REEL SIZE i178 M i178 O1 N i60 O1 W 9.00 O0.5 W1 12.00 O0.5 H i13.5 O0.5 K 10.5 S G R 5.00 V 18.00 2.00 i10.0 O0.5 7 |
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